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Si1302DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.4
0.2
0.0
- 0.2
- 0.4
- 0.6
I D = 250 μ A
5
4
3
2
1
0
T A = 25 °C
- 50
- 25
0
25
50
75
100
125
150
10 -2
10 -1
1
10
100
600
T J - Temperat u re (°C)
Threshold Voltage
Time (s)
Single Pulse Power
2
1
D u ty Cycle = 0.5
0.2
N otes:
0.1
0.1
0.05
P DM
t 1
t 2
0.01
0.02
Single P u lse
t 1
1. D u ty Cycle, D =
t 2
2. Per Unit Base = R thJA = 360 °C/ W
3. T JM – T A = P DM Z thJA(t)
4. S u rface Mo u nted
10 -4
10 -3
10 -2
10 -1
1
10
100
600
Sq u are W a v e P u lse D u ration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single P u lse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
Sq u are W a v e P u lse D u ration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71249 .
www.vishay.com
4
Document Number: 71249
S10-2140-Rev. F, 20-Sep-10
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